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2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
AC and DC Operating Conditions
Table 61: Input Leakage Current
Parameter/Condition
Input leakage current: For CA, CKE,
CS#, CK, CK#; Any input 0V ≤ V IN ≤ V DDCA ;
Symbol
I L
Min
–2
Max
2
Unit
μ A
Notes
1
(All other pins not under test = 0V)
V REF supply leakage current: V REFDQ =
I VREF
–1
1
μ A
2
V DDQ /2, or V REFCA = V DDCA /2; (All other
pins not under test = 0V)
Notes:
1. Although DM is for input only, the DM leakage must match the DQ and DQS/DQS# out-
put leakage specification.
2. The minimum limit requirement is for testing purposes. The leakage current on V REFCA
and V REFDQ pins should be minimal.
Table 62: Operating Temperature Range
Parameter/Condition
IT temperature range
AT temperature range
Symbol
T CASE1
Min
–25
–40
Max
+85
+105
Unit
?C
?C
Notes:
1. Operating temperature is the case surface temperature at the center of the top side of
the device. For measurement conditions, refer to the JESD51-2 standard.
2. Some applications require operation in the maximum case temperature range, between
85?C and 105?C. For some LPDDR2 devices, derating may be necessary to operate in this
range (see the MR4 Device Temperature (MA[7:0] = 04h) table).
3. Either the device operating temperature or the temperature sensor can be used to set
an appropriate refresh rate, determine the need for AC timing derating, and/or monitor
the operating temperature (see Temperature Sensor (page 87)). When using the temper-
ature sensor, the actual device case temperature may be higher than the T CASE rating
that applies for the operating temperature range. For example, T CASE could be above
85?C when the temperature sensor indicates a temperature of less than 85?C.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
118
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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